Harris
IRF823
Power Field-Effect Transistor, 2A I(D), 450V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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Technical Specifications
Harris IRF823 technical specifications.
General
Max Operating Temperature
150
Number of Terminals
3
Terminal Position
SINGLE
JEDEC Package Code
TO-220AB
Number of Elements
1
Compliance
RoHS
No
REACH
unknown
Military Spec
False
Datasheet
Harris IRF823 Datasheet
Download the complete datasheet for Harris IRF823 to view detailed technical specifications.
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