Harris
RFD16N05LSM
Power Field-Effect Transistor, 16A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
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Technical Specifications
Harris RFD16N05LSM technical specifications.
General
Max Operating Temperature
150
Number of Terminals
2
Terminal Position
SINGLE
JEDEC Package Code
TO-252AA
Number of Elements
1
Compliance
RoHS
No
Eccn Code
EAR99
REACH
unknown
Military Spec
False
Datasheet
Harris RFD16N05LSM Datasheet
Download the complete datasheet for Harris RFD16N05LSM to view detailed technical specifications.
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