Harris
RFD8P06ESM
Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
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Technical Specifications
Harris RFD8P06ESM technical specifications.
General
Max Operating Temperature
175
Number of Terminals
2
Terminal Position
SINGLE
JEDEC Package Code
TO-252AA
Number of Elements
1
Compliance
RoHS
No
Eccn Code
EAR99
REACH
unknown
Military Spec
False
Datasheet
Harris RFD8P06ESM Datasheet
Download the complete datasheet for Harris RFD8P06ESM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.