Silicon NPN phototransistor with a 935nm peak sensitivity, housed in a 3-pin TO-18 package. Features a 30V collector-emitter breakdown voltage and a maximum collector current of 4mA. Operates across a wide temperature range from -55°C to 125°C, with a power dissipation of 150mW. This through-hole mount component offers a narrow 12° viewing angle and a 2µs fall time.
PackageTO-18
MountingThrough Hole
PolarityNPN
Power150mW
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Technical Specifications
Honeywell SD5491-004 technical specifications.
General
Package/Case
TO-18
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
400mV
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
30V
Diameter
4.06mm
Fall Time
2us
Height
5.08mm
Length
17.77mm
Max Collector Current
4mA
Max Operating Temperature
125°C
Min Operating Temperature
-55°C
Max Power Dissipation
150mW
Mount
Through Hole
Number of Elements
1
Orientation
Top View
Output Current
8mA
Packaging
Bulk
Polarity
NPN
Power Dissipation
150mW
Radiation Hardening
No
Reach SVHC Compliant
Unknown
RoHS Compliant
No
Viewing Angle
12°
Wavelength
935nm
Compliance
RoHS
Not CompliantNo
Datasheet
Honeywell SD5491-004 Datasheet
Download the complete datasheet for Honeywell SD5491-004 to view detailed technical specifications.
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