NPN phototransistor with 30V collector-emitter breakdown voltage and 6mA maximum collector current. Features a 935nm wavelength sensitivity, 20° viewing angle, and 100mW power dissipation. Operates within a -40°C to 85°C temperature range. Packaged in bulk for through-hole mounting, this RoHS compliant component offers a 15000ns fall time.
PackageT
MountingThrough Hole
PolarityNPN
Power100mW
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Technical Specifications
Honeywell SDP8476-201 technical specifications.
General
Package/Case
T
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
400mV
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
30V
Fall Time
15000ns
Height
6.35mm
Lead Free
Lead Free
Length
3.18mm
Max Collector Current
6mA
Max Operating Temperature
85°C
Min Operating Temperature
-40°C
Max Power Dissipation
100mW
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Orientation
Side View
Output Current
6mA
Packaging
Bulk
Polarity
NPN
Power Dissipation
100mW
RoHS Compliant
Yes
Viewing Angle
20°
Wavelength
935nm
Width
3.94mm
Compliance
RoHS
Compliant
Datasheet
Honeywell SDP8476-201 Datasheet
Download the complete datasheet for Honeywell SDP8476-201 to view detailed technical specifications.
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