The 1N5767 is a silicon pin diode with a minimum breakdown voltage of 100V and a maximum power dissipation of 0.25W. It has a maximum operating temperature of 150°C and a minimum operating temperature of -65°C. The diode is packaged in an axial configuration with two terminals. It is constructed from silicon and is a single element device.
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Technical Specifications
HP 1N5767 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -65 |
| Terminal Position | AXIAL |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | PIN DIODE |
| Breakdown Voltage-Min | 100 |
| Power Dissipation-Max | 0.25 |
Compliance
| RoHS | No |
| HTS Code | 8541.10.00.80 |
| REACH | unknown |
| Military Spec | False |
Datasheet
HP 1N5767 Datasheet
Download the complete datasheet for HP 1N5767 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.