The 1N5403G is a silicon rectifier diode with a maximum operating temperature of 150 degrees Celsius and a minimum operating temperature of -55 degrees Celsius. It features a DO-27 axial package with two terminals and is made of silicon. The diode is a single-element general purpose rectifier with a maximum reverse voltage of 300 volts.
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Technical Specifications
HY Electronic 1N5403G technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | AXIAL |
| JEDEC Package Code | DO-27 |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 300 |
Compliance
| REACH | unknown |
| Military Spec | False |
Datasheet
HY Electronic 1N5403G Datasheet
Download the complete datasheet for HY Electronic 1N5403G to view detailed technical specifications.
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