The DB207S is a 4-element bridge rectifier diode from HY Electronic, featuring a SILICON diode element material and a maximum operating temperature of 150 degrees Celsius. It has a minimum operating temperature of -55 degrees Celsius and a maximum reverse voltage of 1000 volts. The diode is packaged in a 4-pin R-PDSO-G4 package and is suitable for use in bridge rectifier applications.
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Technical Specifications
HY Electronic DB207S technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| Pin Count | 4 |
| Number of Elements | 4 |
| Diode Element Material | SILICON |
| Diode Type | BRIDGE RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 1000 |
| Breakdown Voltage-Min | 1000 |
Compliance
| REACH | unknown |
| Military Spec | False |
Datasheet
HY Electronic DB207S Datasheet
Download the complete datasheet for HY Electronic DB207S to view detailed technical specifications.
No datasheet is available for this part.