The BF799-E6327 is a surface mount NPN transistor with a maximum collector-emitter breakdown voltage of 20V and a maximum collector current of 35mA. It has a maximum power dissipation of 280mW and operates over a temperature range of -65°C to 150°C. The transistor features a gain of 13.5dB and a gain bandwidth product of 1.1GHz. It is available in a SOT-23-3 package, packaged on a tape and reel.
PackageSOT-23-3
MountingSurface Mount
PolarityNPN
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Technical Specifications
Infineon BF799-E6327 technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector-emitter Voltage-Max | 20V |
| Continuous Collector Current | 35mA |
| Emitter Base Voltage (VEBO) | 3V |
| Gain | 13.5dB |
| Gain Bandwidth Product | 1.1GHz |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 35mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 280mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Transition Frequency | 800MHz |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BF799-E6327 Datasheet
Download the complete datasheet for Infineon BF799-E6327 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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