The BFG196E6327XT is a single NPN transistor from Infineon with a collector base voltage rating of 20V, collector emitter voltage rating of 12V, and emitter base voltage rating of 2V. It operates at frequencies up to 7.5GHz and can handle a maximum power dissipation of 800mW. The device is packaged in a surface mount SOT-223 package and is available on tape and reel. The transistor is rated for operation between -65°C and 150°C.
Frequency7.5GHz
PackageSOT-223
MountingSurface Mount
PolarityNPN
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Technical Specifications
Infineon BFG196E6327XT technical specifications.
General
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Voltage (VCEO) | 12V |
| Emitter Base Voltage (VEBO) | 2V |
| Frequency | 7.5GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 800mW |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BFG196E6327XT Datasheet
Download the complete datasheet for Infineon BFG196E6327XT to view detailed technical specifications.
No datasheet is available for this part.