The BFG19SE6327 is a surface mount NPN transistor with a collector-emitter breakdown voltage of 15V and a maximum collector current of 210mA. It operates over a temperature range of -65°C to 150°C and has a maximum power dissipation of 1W. The transistor is packaged in a SOT-223-4 package and is lead-free, but not RoHS compliant. It has a gain of 8.5dB and a gain bandwidth product of 5.5GHz.
PackageSOT-223-4
Current Rating100mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Infineon BFG19SE6327 technical specifications.
General
| Package/Case | SOT-223-4 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector-emitter Voltage-Max | 15V |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 3V |
| Gain | 8.5dB |
| Gain Bandwidth Product | 5.5GHz |
| Lead Free | Contains Lead |
| Max Breakdown Voltage | 15V |
| Max Collector Current | 210mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 5.5GHz |
| DC Rated Voltage | 15V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BFG19SE6327 Datasheet
Download the complete datasheet for Infineon BFG19SE6327 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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