The BFP640H6327 is a surface mount bipolar transistor from Infineon with a maximum collector current of 50mA and a maximum breakdown voltage of 4.5V. It has a maximum operating temperature range of -65°C to 150°C and a maximum power dissipation of 200mW. The transistor is packaged in a SOT-343-4 package and is available in a cut tape packaging format.
Frequency40GHz
PackageSOT-343-4
MountingSurface Mount
Quick Jump:
Technical Specifications
Infineon BFP640H6327 technical specifications.
General
| Package/Case | SOT-343-4 |
| Collector Base Voltage (VCBO) | 13V |
| Collector Emitter Breakdown Voltage | 4.5V |
| Emitter Base Voltage (VEBO) | 1.2V |
| Gain | 12.5dB |
| Height | 0.9mm |
| Length | 2mm |
| Max Breakdown Voltage | 4.5V |
| Max Collector Current | 50mA |
| Max Frequency | 40GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Transition Frequency | 40GHz |
| Width | 1.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BFP640H6327 Datasheet
Download the complete datasheet for Infineon BFP640H6327 to view detailed technical specifications.
No datasheet is available for this part.
Product Images
