The BFR193WH6327 is a surface mount NPN transistor with a maximum collector current of 80mA and a maximum operating temperature of 150°C. It features a collector emitter breakdown voltage of 12V and a maximum power dissipation of 580mW. The transistor is packaged in a SOT-323-3 case and is available in quantities of 3000 per reel. It is designed for high-frequency applications, with a maximum frequency of 8GHz and a transition frequency of 8GHz.
Frequency8GHz
PackageSOT-323-3
MountingSurface Mount
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Technical Specifications
Infineon BFR193WH6327 technical specifications.
General
| Package/Case | SOT-323-3 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 12V |
| Emitter Base Voltage (VEBO) | 2V |
| Gain | 16dB |
| Height | 0.8mm |
| Length | 2mm |
| Max Collector Current | 80mA |
| Max Frequency | 8GHz |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 580mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Transition Frequency | 8GHz |
| Width | 1.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BFR193WH6327 Datasheet
Download the complete datasheet for Infineon BFR193WH6327 to view detailed technical specifications.
No datasheet is available for this part.
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