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Technical Specifications
Infineon BSB056N10NN3G technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 3.23nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 1.56W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Rds On Max | 6.8mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 15ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSB056N10NN3G Datasheet
Download the complete datasheet for Infineon BSB056N10NN3G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.