The BSS83PH6327XT is a single N-channel MOSFET from Infineon with a maximum operating temperature range of -55°C to 150°C. It features a drain to source breakdown voltage of -60V and a continuous drain current of -330mA. The device has a drain to source resistance of 2 ohms and a power dissipation of 360 milliwatts. It is available in tape and reel packaging.
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Technical Specifications
Infineon BSS83PH6327XT technical specifications.
General
| Continuous Drain Current (ID) | -330mA |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 2R |
| Element Configuration | Single |
| Fall Time | 64ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Power Dissipation | 360mW |
| Turn-Off Delay Time | 56ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSS83PH6327XT Datasheet
Download the complete datasheet for Infineon BSS83PH6327XT to view detailed technical specifications.
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