The CFY25-20(P) is a low noise GaAs FET with a maximum operating temperature of 175°C and a maximum power dissipation of 250mW. It has a maximum drain to source voltage of 5V and a continuous drain current of 80mA. The device operates at a frequency of up to 12 GHz and has a gain of 9dB. It is packaged individually.
Frequency12 GHz
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Technical Specifications
Infineon CFY25-20(P) technical specifications.
General
| Continuous Drain Current (ID) | 80mA |
| Drain to Source Voltage (Vdss) | 5V |
| Gain | 9dB |
| Gate to Source Voltage (Vgs) | 500mV |
| Max Operating Temperature | 175°C |
| Max Power Dissipation | 250mW |
| Operating Frequency | 12 GHz |
| Package Quantity | 1 |
| Technology | GAAS |
Compliance
| RoHS | Not Compliant |
Datasheet
Infineon CFY25-20(P) Datasheet
Download the complete datasheet for Infineon CFY25-20(P) to view detailed technical specifications.
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