The CFY25-20(S) is a GaAs FET with a maximum operating temperature of 175°C and a maximum power dissipation of 250mW. It has a drain to source breakdown voltage of 5V and a gate to source voltage of 500mV. The device is capable of a continuous drain current of 80mA and has a noise figure of 1.9dB. It is suitable for high-frequency applications, with a frequency of up to 12GHz.
Frequency12GHz
Power250mW
Quick Jump:
Technical Specifications
Infineon CFY25-20(S) technical specifications.
General
| Continuous Drain Current (ID) | 80mA |
| Drain to Source Breakdown Voltage | 5V |
| Drain to Source Voltage (Vdss) | 5V |
| Frequency | 12GHz |
| Gain | 9dB |
| Gate to Source Voltage (Vgs) | 500mV |
| Max Operating Temperature | 175°C |
| Max Power Dissipation | 250mW |
| Noise Figure | 1.9dB |
| P1dB | 15dBm |
| Package Quantity | 1 |
| Power Dissipation | 250mW |
| Technology | GAAS |
Compliance
| RoHS | Compliant |
Datasheet
Infineon CFY25-20(S) Datasheet
Download the complete datasheet for Infineon CFY25-20(S) to view detailed technical specifications.
No datasheet is available for this part.