The IPB038N12N3G is a 120A continuous drain current MOSFET from Infineon, packaged in a TO-263-3 case. It has a maximum operating temperature range of -55°C to 175°C and a maximum power dissipation of 300W. The device features a gate to source voltage of 20V, a threshold voltage of 3V, and a maximum Rds on resistance of 3.8mΩ. The MOSFET has a fall time of 21ns, a turn-off delay time of 70ns, and a turn-on delay time of 35ns. It is lead free and RoHS compliant.
PackageTO-263-3
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Technical Specifications
Infineon IPB038N12N3G technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 120A |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 4.57mm |
| Input Capacitance | 13.8nF |
| Lead Free | Lead Free |
| Length | 10.31mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Rds On Max | 3.8mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 70ns |
| Turn-On Delay Time | 35ns |
| Width | 9.45mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB038N12N3G Datasheet
Download the complete datasheet for Infineon IPB038N12N3G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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