The IPB065N15N3GE818XT is a N-channel power MOSFET from Infineon with a maximum operating temperature range of -55°C to 175°C. It features a drain to source breakdown voltage of 150V and a continuous drain current of 130A. The device has a power dissipation of 300W and a drain to source resistance of 6.5mR. It is packaged in a TO-263-7 case and is available in tape and reel packaging.
PackageTO-263-7
PolarityN-CHANNEL
Power300W
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Technical Specifications
Infineon IPB065N15N3GE818XT technical specifications.
General
| Package/Case | TO-263-7 |
| Continuous Drain Current (ID) | 130A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 6.5mR |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Turn-Off Delay Time | 46ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB065N15N3GE818XT Datasheet
Download the complete datasheet for Infineon IPB065N15N3GE818XT to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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