
The IPB081N06L3G is a 50A 20V MOSFET from Infineon, packaged in a TO-263-3. It features a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. The device has a maximum power dissipation of 2.5W and is RoHS compliant. It is part of the OptiMOS series and has a high current capability with a continuous drain current of 50A.
Infineon IPB081N06L3G technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 50A |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 4.57mm |
| Input Capacitance | 4.785nF |
| Length | 10.31mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Rds On Max | 8.4mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 37ns |
| Turn-On Delay Time | 15ns |
| Width | 9.45mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPB081N06L3G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
