The IPD034N06N3G is a 60V 100A TO-252-3 OptiMOS MOSFET from Infineon. It features a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. The device is RoHS compliant and lead free, with a maximum power dissipation of 167W. It has an input capacitance of 11nF and a turn-on delay time of 38ns, as well as a turn-off delay time of 63ns.
PackageTO-252-3
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Technical Specifications
Infineon IPD034N06N3G technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 60V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 2.413mm |
| Input Capacitance | 11nF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 167W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Rds On Max | 3.4mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 63ns |
| Turn-On Delay Time | 38ns |
| Width | 6.223mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD034N06N3G Datasheet
Download the complete datasheet for Infineon IPD034N06N3G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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