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Technical Specifications
Infineon IPI65R660CFD technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 660mR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 615pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 62.5W |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 63W |
| Rds On Max | 660mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 9ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPI65R660CFD Datasheet
Download the complete datasheet for Infineon IPI65R660CFD to view detailed technical specifications.
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