This device is a P-channel enhancement-mode logic-level power MOSFET. It is rated for -30 V drain-source voltage and -50 A continuous drain current at 25°C, with a maximum drain-source on-state resistance of 7.0 mΩ at VGS = -10 V. The transistor is avalanche rated, dv/dt rated, and specified for operation up to 175°C junction temperature. It is supplied in a PG-TO252-5 package and the packing information lists 1000 pieces per reel.
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| Package/Case | TO-252-5 |
| Continuous Drain Current (ID) | 50A |
| Current Rating | -50A |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 104ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.41mm |
| Input Capacitance | 6.88nF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Rds On Max | 7mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 139ns |
| Turn-On Delay Time | 14.8ns |
| DC Rated Voltage | -30V |
| Width | 6.22mm |
| RoHS | Compliant |
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