The SPI11N60CFDXKSA1 is a high-power N-channel MOSFET from Infineon with a maximum operating temperature range of -55°C to 150°C. It features a continuous drain current of 53A and a drain to source voltage of 650V. The device is packaged in a TO-262-3 case and is mounted through a hole. The MOSFET has a drain to source resistance of 440mR and a gate to source voltage of 20V. It also has a fall time of 7ns, turn-off delay time of 43ns, and turn-on delay time of 34ns.
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Infineon SPI11N60CFDXKSA1 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 53A |
| Drain to Source Resistance | 440mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| RoHS Compliant | No |
| Series | SPI11N60 |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 34ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Infineon SPI11N60CFDXKSA1 Datasheet
Download the complete datasheet for Infineon SPI11N60CFDXKSA1 to view detailed technical specifications.
No datasheet is available for this part.
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