The SPI20N65C3HKSA1 is a power MOSFET from Infineon with a continuous drain current of 20.7A and a gate to source voltage of 20V. It features a fall time of 4.5ns and turn-on and turn-off delay times of 10ns and 67ns, respectively. The device is designed for through hole mounting and is packaged in a rail or tube format. It operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations.
MountingThrough Hole
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Technical Specifications
Infineon SPI20N65C3HKSA1 technical specifications.
General
| Continuous Drain Current (ID) | 20.7A |
| Fall Time | 4.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 67ns |
| Turn-On Delay Time | 10ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPI20N65C3HKSA1 Datasheet
Download the complete datasheet for Infineon SPI20N65C3HKSA1 to view detailed technical specifications.
No datasheet is available for this part.
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