The TK80A08K3(Q) is a SIPMOS power MOSFET from Infineon with a maximum drain to source voltage of 60V and continuous drain current of 200mA. It features a maximum power dissipation of 360mW and an on-resistance of 5 ohms. The device is packaged in a TO-236-3 surface mount package and is available in tape and reel packaging. The TK80A08K3(Q) operates over a temperature range of -40°C to 150°C.
PackageTO-236-3
MountingSurface Mount
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Technical Specifications
Infineon TK80A08K3(Q) technical specifications.
General
| Package/Case | TO-236-3 |
| Continuous Drain Current (ID) | 200mA |
| Drain to Source Voltage (Vdss) | 60V |
| Input Capacitance | 45pF |
| Max Power Dissipation | 360mW |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Rds On Max | 5R |
| Series | SIPMOS® |
Compliance
| RoHS | Not Compliant |
Datasheet
Infineon TK80A08K3(Q) Datasheet
Download the complete datasheet for Infineon TK80A08K3(Q) to view detailed technical specifications.
No datasheet is available for this part.