N-channel power MOSFET featuring 55V drain-source breakdown voltage and 94A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 7.5mΩ drain-source resistance. Designed for through-hole mounting in a TO-220AB package, it operates within a temperature range of -55°C to 175°C and supports a maximum power dissipation of 140W. Key electrical characteristics include a 2V threshold voltage and 2.84nF input capacitance.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power140W
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Technical Specifications
International Rectifier AUIRF1010Z technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
94A
Drain to Source Breakdown Voltage
55V
Drain to Source Resistance
7.5mR
Drain to Source Voltage (Vdss)
55V
Gate to Source Voltage (Vgs)
20V
Height
16.51mm
Input Capacitance
2.84nF
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
140W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
140W
Radiation Hardening
No
Rds On Max
7.5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Threshold Voltage
2V
Turn-Off Delay Time
36ns
Turn-On Delay Time
18ns
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier AUIRF1010Z Datasheet
Download the complete datasheet for International Rectifier AUIRF1010Z to view detailed technical specifications.
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