N-Channel Power MOSFET featuring 55V drain-source voltage and 75A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 7.5mΩ Rds On resistance and 140W maximum power dissipation. Designed for through-hole mounting in a TO-262 package, it operates across a wide temperature range of -55°C to 175°C. Key electrical characteristics include 2.84nF input capacitance and fast switching times with 18ns turn-on and 36ns turn-off delays. This component is RoHS compliant.
PackageTO-262
MountingThrough Hole
Power140W
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Technical Specifications
International Rectifier AUIRF1010ZL technical specifications.
General
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Voltage (Vdss) | 55V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 11.3mm |
| Input Capacitance | 2.84nF |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 140W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 140W |
| Radiation Hardening | No |
| Rds On Max | 7.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 36ns |
| Turn-On Delay Time | 18ns |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRF1010ZL Datasheet
Download the complete datasheet for International Rectifier AUIRF1010ZL to view detailed technical specifications.
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