International Rectifier
AUIRF1018ES
Power Field-Effect Transistor, 79A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3
PackageD2PAK
MountingSurface Mount
Power110W
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Technical Specifications
International Rectifier AUIRF1018ES technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 79A |
| Drain to Source Voltage (Vdss) | 60V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 2.29nF |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 110W |
| Radiation Hardening | No |
| Rds On Max | 8.4mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 13ns |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRF1018ES Datasheet
Download the complete datasheet for International Rectifier AUIRF1018ES to view detailed technical specifications.
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