N-Channel Power MOSFET, D2PAK package, featuring 40V drain-source voltage and 75A continuous drain current. Offers a low 4mΩ Rds On resistance at a nominal 2V gate-source voltage. Designed for surface mounting with a maximum power dissipation of 200W and operating temperatures from -55°C to 175°C. Includes 7.36nF input capacitance and fast switching times with 17ns turn-on and 72ns turn-off delays. This component is RoHS compliant.
International Rectifier AUIRF1404S technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Voltage (Vdss) | 40V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 7.36nF |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 3.8W |
| Radiation Hardening | No |
| Rds On Max | 4mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 72ns |
| Turn-On Delay Time | 17ns |
| Width | 9.65mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier AUIRF1404S to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.