N-Channel Power MOSFET, TO-220AB package, featuring 270A continuous drain current and 40V drain-to-source breakdown voltage. Offers a low 2.3mΩ drain-to-source resistance and 6.45nF input capacitance. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 300W. This through-hole mounted component is RoHS compliant.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power300W
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Technical Specifications
International Rectifier AUIRF2804 technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
270A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
2.3mR
Drain to Source Voltage (Vdss)
40V
Gate to Source Voltage (Vgs)
20V
Height
12.88mm
Input Capacitance
6.45nF
Length
10.66mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
300W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET® Series
Threshold Voltage
2V
Turn-Off Delay Time
130ns
Turn-On Delay Time
13ns
Width
4.82mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier AUIRF2804 Datasheet
Download the complete datasheet for International Rectifier AUIRF2804 to view detailed technical specifications.
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