
N-Channel Power MOSFET, TO-220AB package, featuring 270A continuous drain current and 40V drain-to-source breakdown voltage. Offers a low 2.3mΩ drain-to-source resistance and 6.45nF input capacitance. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 300W. This through-hole mounted component is RoHS compliant.
International Rectifier AUIRF2804 technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 270A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 2.3mR |
| Drain to Source Voltage (Vdss) | 40V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 12.88mm |
| Input Capacitance | 6.45nF |
| Length | 10.66mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 130ns |
| Turn-On Delay Time | 13ns |
| Width | 4.82mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier AUIRF2804 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.