International Rectifier
AUIRF2804STRR
Power Field-Effect Transistor, 270A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-3
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power300W
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Technical Specifications
International Rectifier AUIRF2804STRR technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 270A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 2.3mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 130ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 6.45nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 2mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 130ns |
| Turn-On Delay Time | 13ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRF2804STRR Datasheet
Download the complete datasheet for International Rectifier AUIRF2804STRR to view detailed technical specifications.
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