International Rectifier
AUIRF2804WL
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
PackageTO-262-3
MountingThrough Hole
Power300W
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Technical Specifications
International Rectifier AUIRF2804WL technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 240A |
| Drain to Source Voltage (Vdss) | 40V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.65mm |
| Input Capacitance | 7.978nF |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 1.8mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 71ns |
| Turn-On Delay Time | 19ns |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRF2804WL Datasheet
Download the complete datasheet for International Rectifier AUIRF2804WL to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.