N-Channel Power MOSFET, TO-220AB package, featuring 75A continuous drain current and 55V drain-to-source voltage. This silicon, metal-oxide semiconductor FET offers a low 4.7mΩ Rds On resistance and a maximum power dissipation of 330W. Operating temperature range spans from -55°C to 175°C, with a nominal gate-source voltage of 2V. Through-hole mounting and RoHS compliance are standard.
PackageTO-220AB
MountingThrough Hole
Power330W
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Technical Specifications
International Rectifier AUIRF2805 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Voltage (Vdss) | 55V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 16.51mm |
| Input Capacitance | 5.11nF |
| Length | 10.66mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 330W |
| Mount | Through Hole |
| Nominal Vgs | 2V |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 330W |
| Radiation Hardening | No |
| Rds On Max | 4.7mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 68ns |
| Turn-On Delay Time | 14ns |
| Width | 4.82mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRF2805 Datasheet
Download the complete datasheet for International Rectifier AUIRF2805 to view detailed technical specifications.
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