N-channel power MOSFET featuring 150V drain-to-source breakdown voltage (Vdss) and 21A continuous drain current (ID). This surface-mount device offers a low 82mΩ drain-to-source resistance (Rds On Max) and operates with a gate-to-source voltage (Vgs) up to 20V. Designed for high-temperature applications with a maximum operating temperature of 175°C, it exhibits fast switching characteristics with a 9.6ns turn-on delay and 38ns fall time. The component is housed in a D2PAK package, supporting a maximum power dissipation of 94W.
PackageD2PAK
MountingSurface Mount
Power3.8W
Quick Jump:
Technical Specifications
International Rectifier AUIRF3315S technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 21A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 82mR |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time | 38ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 1.3nF |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 94W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 3.8W |
| Radiation Hardening | No |
| Rds On Max | 82mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 49ns |
| Turn-On Delay Time | 9.6ns |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRF3315S Datasheet
Download the complete datasheet for International Rectifier AUIRF3315S to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.