N-Channel Power MOSFET, TO-220AB package, featuring 100V drain-source breakdown voltage and 59A continuous drain current. Offers low 18mΩ drain-source resistance (Rds On Max) and 160W maximum power dissipation. Operates across a wide temperature range from -55°C to 175°C, with 2.9nF input capacitance and 20V gate-source voltage rating. Through-hole mounting design, RoHS compliant.
International Rectifier AUIRF3710Z technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 59A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 18mR |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.02mm |
| Input Capacitance | 2.9nF |
| Length | 10.66mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 160W |
| Mount | Through Hole |
| Nominal Vgs | 2V |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 160W |
| Radiation Hardening | No |
| Rds On Max | 18mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 41ns |
| Turn-On Delay Time | 17ns |
| Width | 4.82mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier AUIRF3710Z to view detailed technical specifications.
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