N-Channel Power MOSFET, D2PAK package, featuring 75V drain-source breakdown voltage and 106A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 7mΩ Rds On resistance and 200W maximum power dissipation. Designed for surface mounting, it operates across a wide temperature range of -55°C to 175°C with fast switching times, including a 16ns turn-on delay and 68ns turn-off delay. RoHS compliant.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power200W
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Technical Specifications
International Rectifier AUIRF3808S technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
106A
Drain to Source Breakdown Voltage
75V
Drain to Source Voltage (Vdss)
75V
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
5.31nF
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Surface Mount
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
200W
Radiation Hardening
No
Rds On Max
7mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
68ns
Turn-On Delay Time
16ns
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier AUIRF3808S Datasheet
Download the complete datasheet for International Rectifier AUIRF3808S to view detailed technical specifications.
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