International Rectifier
AUIRF3808STRR
Power Field-Effect Transistor, 106A I(D), 75V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power200W
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Technical Specifications
International Rectifier AUIRF3808STRR technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 106A |
| Drain to Source Breakdown Voltage | 75V |
| Fall Time | 120ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 68ns |
| Turn-On Delay Time | 16ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRF3808STRR Datasheet
Download the complete datasheet for International Rectifier AUIRF3808STRR to view detailed technical specifications.
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