P-channel MOSFET featuring 74A continuous drain current and -55V drain-to-source voltage. This silicon, metal-oxide semiconductor FET offers a low on-resistance of 0.02 ohms and a maximum power dissipation of 200W. Designed for through-hole mounting in a TO-220AB plastic package, it operates across a wide temperature range from -55°C to 175°C. Key electrical characteristics include 3.4nF input capacitance, 18ns turn-on delay, and 61ns turn-off delay.
PackageTO-220AB
MountingThrough Hole
Quick Jump:
Technical Specifications
International Rectifier AUIRF4905 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 74A |
| Drain to Source Voltage (Vdss) | -55V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 16.51mm |
| Input Capacitance | 3.4nF |
| Length | 10.66mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 61ns |
| Turn-On Delay Time | 18ns |
| Width | 4.82mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRF4905 Datasheet
Download the complete datasheet for International Rectifier AUIRF4905 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
