P-channel power MOSFET featuring a 55V drain-source voltage and 42A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 20mΩ drain-to-source resistance. Designed for surface mounting in a D2PAK package, it boasts a maximum power dissipation of 170W and operates across a temperature range of -55°C to 150°C. Key switching characteristics include a 20ns turn-on delay and 51ns turn-off delay, with a 64ns fall time.
PackageD2PAK
MountingSurface Mount
Power170W
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Technical Specifications
International Rectifier AUIRF4905STRL technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 42A |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 55V |
| Element Configuration | Single |
| Fall Time | 64ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.5nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 170W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Power Dissipation | 170W |
| Rds On Max | 20mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 51ns |
| Turn-On Delay Time | 20ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRF4905STRL Datasheet
Download the complete datasheet for International Rectifier AUIRF4905STRL to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.