International Rectifier
AUIRF5210S
Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2
PackageTO-263-3
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
International Rectifier AUIRF5210S technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 38A |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance | 2.78nF |
| Lead Free | Lead Free |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Rds On Max | 60mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRF5210S Datasheet
Download the complete datasheet for International Rectifier AUIRF5210S to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.