P-channel power MOSFET featuring 100V drain-source breakdown voltage and 38A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 60mΩ drain-source resistance. Designed for surface mounting in a TO-263-3 package, it operates within a temperature range of -55°C to 150°C. Key electrical characteristics include 2.78nF input capacitance, 14ns turn-on delay, and 72ns turn-off delay. ROHS compliant and supplied on tape and reel.
PackageTO-263-3
MountingSurface Mount
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Technical Specifications
International Rectifier AUIRF5210STRL technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 38A |
| Drain to Source Breakdown Voltage | -100V |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 55ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.78nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 60mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 72ns |
| Turn-On Delay Time | 14ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRF5210STRL Datasheet
Download the complete datasheet for International Rectifier AUIRF5210STRL to view detailed technical specifications.
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