International Rectifier
AUIRF6218STRR
Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET
PackageTO-263-3
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
International Rectifier AUIRF6218STRR technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 27A |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.21nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 150mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 21ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRF6218STRR Datasheet
Download the complete datasheet for International Rectifier AUIRF6218STRR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.