N-Channel Power MOSFET, 50V Drain-Source Breakdown Voltage, 3A Continuous Drain Current. Features 130mΩ maximum Rds(on) at 10V gate-source voltage. Operates with a 20V maximum gate-source voltage and offers a maximum power dissipation of 2.4W. This surface-mount device, packaged in an 8-pin SOIC, includes two N-channel elements with a 2.3ns fall time and 15ns turn-off delay.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.4W
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Technical Specifications
International Rectifier AUIRF7103Q technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Breakdown Voltage | 50V |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | 50V |
| Fall Time | 2.3ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 255pF |
| Length | 5mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.4W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.4W |
| Radiation Hardening | No |
| Rds On Max | 130mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 5.1ns |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRF7103Q Datasheet
Download the complete datasheet for International Rectifier AUIRF7103Q to view detailed technical specifications.
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