P-channel MOSFET, surface mount, featuring 20V drain-source breakdown voltage and 5.4A continuous drain current. Offers a low 60mΩ drain-source on-resistance. This silicon, metal-oxide semiconductor FET operates within a -55°C to 150°C temperature range and has a maximum power dissipation of 2.5W. The SOIC package measures 5mm in length, 4mm in width, and 1.5mm in height.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power2.5W
Quick Jump:
Technical Specifications
International Rectifier AUIRF7207Q technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5.4A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 41ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.5mm |
| Input Capacitance | 780pF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 60mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 11ns |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRF7207Q Datasheet
Download the complete datasheet for International Rectifier AUIRF7207Q to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.