INTERNATIONAL RECTIFIER

AUIRF7303Q

Datasheet

30V 5.3A N-Channel MOSFET, 50mR Rds On, SOIC, 2-Element

International Rectifier

AUIRF7303Q

Name: AUIRF7303Q International Rectifier
Brand: International Rectifier
SKU: AUIRF7303Q

30V 5.3A N-Channel MOSFET, 50mR Rds On, SOIC, 2-Element

Surface mount N-channel power MOSFET featuring 30V drain-to-source breakdown voltage and 5.3A continuous drain current. This dual-element silicon Metal-oxide Semiconductor FET offers a low 50mΩ drain-to-source resistance. Key switching characteristics include a 2.9ns turn-on delay and 7.8ns fall time, with an input capacitance of 515pF. Operating across a temperature range of -55°C to 150°C, it supports a maximum power dissipation of 2.4W.

PackageSOIC

MountingSurface Mount

PolarityN-CHANNEL

Power2W

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Technical Specifications

International Rectifier AUIRF7303Q technical specifications.

General

Package/Case	SOIC
Continuous Drain Current (ID)	5.3A
Drain to Source Breakdown Voltage	30V
Drain to Source Resistance	80mR
Drain to Source Voltage (Vdss)	30V
Fall Time	7.8ns
FET Type	2 N-Channel
Gate to Source Voltage (Vgs)	20V
Height	1.5mm
Input Capacitance	515pF
Length	5mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	2.4W
Mount	Surface Mount
Nominal Vgs	1V
Number of Elements	2
Package Quantity	95
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	2W
Radiation Hardening	No
Rds On Max	50mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	HEXFET®
Turn-Off Delay Time	15ns
Turn-On Delay Time	2.9ns
Width	4mm