P-channel MOSFET, 20V drain-source breakdown voltage, 4.3A continuous drain current, and 90mΩ maximum drain-source on-resistance. This surface-mount device features a 2-element silicon metal-oxide semiconductor FET construction in an SOP-8 package. Key electrical characteristics include a 33ns fall time, 51ns turn-off delay, and 8.4ns turn-on delay, with an input capacitance of 610pF. Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 2W.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power2W
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Technical Specifications
International Rectifier AUIRF7304Q technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4.3A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 140mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 33ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.5mm |
| Input Capacitance | 610pF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 90mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 51ns |
| Turn-On Delay Time | 8.4ns |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRF7304Q Datasheet
Download the complete datasheet for International Rectifier AUIRF7304Q to view detailed technical specifications.
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