Dual N-Channel and P-Channel Power MOSFET, featuring a 30V drain-source breakdown voltage and 4A continuous drain current. This surface-mount device offers a low 50mΩ Rds On (max) and operates with a nominal gate-source voltage of 1V, up to a maximum of 20V. With a maximum power dissipation of 1.4W and an operating temperature range of -55°C to 150°C, it is housed in a compact 5mm x 4mm x 1.5mm SOIC package. This RoHS compliant component is designed for efficient power switching applications.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power1.4W
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Technical Specifications
International Rectifier AUIRF7309Q technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 80mR |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 520pF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.4W |
| Radiation Hardening | No |
| Rds On Max | 50mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRF7309Q Datasheet
Download the complete datasheet for International Rectifier AUIRF7309Q to view detailed technical specifications.
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