AUIRF7313Q

30V N-Channel MOSFET, 6.9A, 29mR, SOIC, Surface Mount

Dual N-Channel Power MOSFET, designed for surface mount applications. Features a 30V Drain to Source Breakdown Voltage (Vdss) and a low 23mΩ Drain to Source Resistance (Rds On Max). Operates with a Gate to Source Voltage (Vgs) up to 20V and handles a Continuous Drain Current (ID) of 6.9A. This component offers fast switching speeds with a Fall Time of 11ns and Turn-Off Delay Time of 21ns. Encased in a compact SOIC package, it supports a wide operating temperature range from -55°C to 175°C.

PackageSOIC

MountingSurface Mount

PolarityN-CHANNEL

Power2.4W

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Technical Specifications

International Rectifier AUIRF7313Q technical specifications.

General

Package/Case	SOIC
Continuous Drain Current (ID)	6.9A
Drain to Source Breakdown Voltage	30V
Drain to Source Resistance	23mR
Drain to Source Voltage (Vdss)	30V
Fall Time	11ns
FET Type	2 N-Channel
Gate to Source Voltage (Vgs)	20V
Height	1.5mm
Input Capacitance	755pF
Length	5mm
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	2.4W
Mount	Surface Mount
Number of Elements	2
Package Quantity	95
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	2.4W
Radiation Hardening	No
Rds On Max	29mR
RoHS Compliant	Yes
Series	HEXFET®
Turn-Off Delay Time	21ns
Turn-On Delay Time	3.7ns
Width	4mm