P-Channel Power MOSFET, featuring a 30V drain-source breakdown voltage and 58mΩ drain-to-source resistance. This surface-mount device offers a continuous drain current of -4.9A and a maximum power dissipation of 2W. It operates across a wide temperature range from -55°C to 150°C, with input capacitance at 710pF. The component includes two elements and is packaged in a RoHS compliant SOIC case.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power2W
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Technical Specifications
International Rectifier AUIRF7316Q technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | -4.9A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 58mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 710pF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 58mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 34ns |
| Turn-On Delay Time | 13ns |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRF7316Q Datasheet
Download the complete datasheet for International Rectifier AUIRF7316Q to view detailed technical specifications.
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